Abstract: Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. And the photoresponse spectral in near and mid-infrared region of electromagnetic spectrum of fabricated highly-doped silicon photodiodes were studied. These devices showed a remarkable photoresponse peak at near-infrared response (NIR) wavelengths. The distinct sub-band gap photoresponse features corresponding to the onset energies are consistent with the active energy levels of known sulfur within the silicon band-gap. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.