SiC MESFET非线性模型及其嵌入研究

徐跃杭, 国云川, 徐锐敏, 延波, 吴韵秋

徐跃杭, 国云川, 徐锐敏, 延波, 吴韵秋. SiC MESFET非线性模型及其嵌入研究[J]. 电子科技大学学报, 2010, 39(3): 443-446,453. DOI: 10.3969/j.issn.1001-0548.2010.03.026
引用本文: 徐跃杭, 国云川, 徐锐敏, 延波, 吴韵秋. SiC MESFET非线性模型及其嵌入研究[J]. 电子科技大学学报, 2010, 39(3): 443-446,453. DOI: 10.3969/j.issn.1001-0548.2010.03.026
XU Yue-hang, GUO Yun-chuan, XU Rui-min, YAN Bo, WU Yun-qiu. Modeling and Embedding of SiC MESFET Nonlinear Model[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(3): 443-446,453. DOI: 10.3969/j.issn.1001-0548.2010.03.026
Citation: XU Yue-hang, GUO Yun-chuan, XU Rui-min, YAN Bo, WU Yun-qiu. Modeling and Embedding of SiC MESFET Nonlinear Model[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(3): 443-446,453. DOI: 10.3969/j.issn.1001-0548.2010.03.026

SiC MESFET非线性模型及其嵌入研究

基金项目: 

国家自然科学基金(60701017,60876052)

详细信息
    作者简介:

    徐跃杭(1981-),男,博士生,主要从事新型半导体器件及其建模方面的研究.

  • 中图分类号: TN304.2

Modeling and Embedding of SiC MESFET Nonlinear Model

  • 摘要: 基于TOM直流I-V模型和Angelov非线性电容模型,该文建立了适合SiCMESFET的非线性模型,并利用符号定义 器件(SDD)实现了在安捷伦ADS软件中嵌入,最终建立了SiCMESFET工艺的模型库。该非线性模型考虑了击穿特性、色散效 应和自热效应等,可进行直流、散射S参数和谐波平衡等ADS软件中的仿真器。该模型在国内SiCMESFET工艺线上的验证结 果表明模型具有较好的精度。
    Abstract: The SiC MESFETs nonlinear characteristic is modeled by modified Triquint's own model (TOM) DC I-V model and Angelov nonlinear capacitor models. The nonlinear model has been implemented in Agilent advanced design system (ADS) by using symbolic defined devices (SDD), and an integral SiC MESFET process line design kit has been embedding in ADS. Its validity is verified by measured DC I-V curves, multi-bias S parameters and harmonic balance simulation based on native SiC MESFET process line, and good accuracy has been achieved.
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出版历程
  • 收稿日期:  2008-11-19
  • 修回日期:  2009-05-03
  • 刊出日期:  2010-06-14

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