SiC MESFET非线性模型及其嵌入研究

基金项目:

国家自然科学基金(60701017，60876052)

详细信息

Modeling and Embedding of SiC MESFET Nonlinear Model

School of Electronic Engineering,University of Electronic Science and Technology of China Chengdu 610054

摘要: 基于TOM直流I-V模型和Angelov非线性电容模型，该文建立了适合SiCMESFET的非线性模型，并利用符号定义器件(SDD)实现了在安捷伦ADS软件中嵌入，最终建立了SiCMESFET工艺的模型库。该非线性模型考虑了击穿特性、色散效应和自热效应等，可进行直流、散射S参数和谐波平衡等ADS软件中的仿真器。该模型在国内SiCMESFET工艺线上的验证结果表明模型具有较好的精度。
- 金属半导体场效应晶体管 /
- 非线性模型 /
- 碳化硅 /
- 符号定义器件
Abstract: The SiC MESFETs nonlinear characteristic is modeled by modified Triquint's own model (TOM) DC I-V model and Angelov nonlinear capacitor models. The nonlinear model has been implemented in Agilent advanced design system (ADS) by using symbolic defined devices (SDD), and an integral SiC MESFET process line design kit has been embedding in ADS. Its validity is verified by measured DC I-V curves, multi-bias S parameters and harmonic balance simulation based on native SiC MESFET process line, and good accuracy has been achieved.
- MESFET /
- nonlinear model /
- SiC /
- symbolic defined devices