[1]
|
ZHANG G, KHESBAK S, AGARWAL A, et al. Evolution of RFIC handset PAs[J]. IEEE Microwave Magazine, 2010, 11(1): 60-69. |
[2]
|
CHUNG Y. Distortion-cancellation of GaAs-HBT amplifier using bias-voltage droop control[J]. Electronics Letters, 2012, 48(18): 1134-1136. |
[3]
|
JANG J S, LEE K H. Implementation of INGaP/GaAs HBT MMIC PA with gain-expansion drive-amplifier and doherty structure[C]//International Conference on Information Science and Applications. Suwon: IEEE Press, 2013: 1-3. |
[4]
|
MEDINA J F M, OLAVSBRAATEN M, GJERTSEN K M. Biasing an HBT MMIC transistor for efficiency and output power enhancement[C]//Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. Ireland Dublin: IEEE Press, 2012:1-3. |
[5]
|
GREBENNIKOV A. Load network design technique for class F and inverse class F PAs[J]. High Frequency Electronics, 2011, 10(5): 58-76. |
[6]
|
SEVIMLI O, PARKER A E, FATTORINI A P, et al. Measurement and modeling of thermal behavior in InGaP/GaAs HBTs[J]. IEEE Transactions on Electron Devices, 2013, 60(5): 1632-1639. |
[7]
|
ISHIKAWA R, KIMURA J, HONJO K. Analytical design method for a low-distortion microwave InGaP/GaAs HBT amplifier based on transient thermal behavior in a GaAs substrate[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3(10): 1705-1712. |
[8]
|
JARVINEN E, KALAJO S, MATILAINEN M. Bias circuits for GaAs HBT power amplifiers[C]//Microwave Symposium Digest, IEEE MTT-S International. Phoenix: IEEE Press, 2001: 507-510. |
[9]
|
JEON J, KIM J, KWON Y. Temperature compensating bias circuit for GaAs HBT RF power amplifiers with stage bypass architecture[J]. Electronics Letters, 2008, 44(19): 1141-1143. |
[10]
|
李诚瞻, 陈志坚, 王永平, 等. InGaP/GaAs HBT射频功率放大器在片温度补偿电路研究[J]. 中国集成电路, 2010(11): 57-61.LI Cheng-zhan, CHEN Zhi-jian, WANG Yong-ping, et al. An on chip temperature compensation circuit research on InGaP/GaAs HBT power amplifier[J]. China Integrated Circuit, 2010(11): 57-61. |
[11]
|
ZHU Y, TWYNAM J K, YAGURA M. Self-heating effect compensation in HBTs and its analysis and simulation[J]. IEEE Transactions on Electron Devices, 2001, 48(11): 2640-2646. |
[12]
|
KIM J H, JO G D, OH J H, et al. Modeling and design methodology of high-efficiency Class-F and Class-F-1 power amplifiers[J]. IEEE Transactions on Microwave Theory and Techniques, 2011, 59(1): 153-165. |
[13]
|
LI Cheng-zhan, CHEN Zhi-jian, HUANG Ji-wei, et al. An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF PA[J]. Journal of Semiconductors, 2011(13): 131-134. |
[14]
|
JI H K, KI Y K, CHUL S P. Linearity improvement of a power amplifier using a series LC resonant circuit[J]. IEEE Microwave and Wireless Components Letters, 2008, 18(5): 332-334. |
[15]
|
HAU G, SINGH M. Multi-mode WCDMA power amplifier module with improved low-power efficiency using stage-bypass[C]//IEEE Radio Frequency Integrated Circuits Symposium (RFIC). Anaheim, California: IEEE Press, 2010: 163-166. |
[16]
|
HAU G, HUSSAIN A, TURPEL J, et al. A 3×3 mm2 LTE/WCDMA dual-mode power amplifier module with integrated high directivity coupler[C]//IEEE Bipolar/ BiCMOS Circuits and Technology Meeting (BCTM). Atlanta: IEEE Press, 2011: 138-141. |