具有提高Q值退耦结构的MEMS谐振器研究

An Energy-Decoupling Frame Structure MEMS Resonator for Q-Enhancement

  • 摘要: 为了提高MEMS谐振器的品质因数(Q值),该文设计一个微型的具有能量退耦作用的外框作为支撑结构。所设计的AlN压电谐振器工作在30 MHz横向振动模态,其Q值可以达到4.3×104,对应的f·Q乘积为1.29×1012。谐振器频率与外框的机械谐振频率比值约10:1,减小了谐振器到基底的能量耦合,从而降低能量损耗并提高谐振器Q值。通过理论和有限元分析并对谐振器的频率响应进行建模,两种方法的模型结果一致,说明了具有能量退耦外框的谐振器能降低锚点造成的能量损耗,从而有效地提高横向振动模态AlN压电谐振器的Q值。

     

    Abstract: In order to enhance the quality factor (Q) of micro-electro-mechanical system (MEMS) resonator, this paper proposes an energy-decoupling frame structure which is applied in an MEMS resonator for energy decoupling and Q enhancement. An aluminium nitride (AlN) piezoelectric resonator is designed to work at 30 MHz frequency (f) in the lateral-extension mode. The resonator Q is significantly enlarged to 4.3×104 and the value of f·Q reaches to 1.29×1012. The energy coupling between the resonator and the substrate is effectively reduced by controlling the resonant frequency ratio of the resonator to the frame structure in around 10:1. Both theoretical analysis and finite-element analysis (FEA) simulation show that the energy loss reduction and Q enhancement of resonator can be achieved by using the proposed structure.

     

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