[1] |
NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Two-Dimensional gas of massless Dirac fermions in graphene[J]. Nature, 2005, 438(7065): 197-200. |
[2] |
NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 2004, 306(5696): 666-669. |
[3] |
WATANABE K, TANIGUCHI T, KANDA H. Direct-Bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal[J]. Nature Materials, 2004, 3(6): 404-409. |
[4] |
MAK K F, LEE C, HONE J, et al. Atomically thin MoS2: A new direct-gap semiconductor[J]. Physical Review Letters, 2010, 105(13): 136805. |
[5] |
WANG Q H, KALANTAR-ZADEH K, KIS A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[J]. Nature Nanotechnology, 2012, 7(11): 699-712. |
[6] |
ZHU K, WEN C, ALJARB A A, et al. The development of integrated circuits based on two-dimensional materials[J]. Nature Electronics, 2021, 4(11): 775-785. |
[7] |
BOLOTINA K I, SIKESB K J, JIANG Z, et al. Ultrahigh electron mobility in suspended graphene[J]. Solid State Communications, 2008, 146(9-10): 351-355. |
[8] |
YU L, LEE Y H, LING X, et al. Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics[J]. Nano Letters, 2014, 14(6): 3055-3063. |
[9] |
TUNG R T. Chemical bonding and Fermi level pinning at metal-semiconductor interfaces[J]. Physical Review Letters, 2000, 84(26): 6078. |
[10] |
LIU H, NEAL A T, YE P D. Channel length scaling of MoS2 MOSFETs[J]. ACS Nano, 2012, 6(10): 8563-8569. |
[11] |
LEE G H, YU Y J, LEE C, et al. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride[J]. Applied Physics Letters, 2011, 99(24): 243114. |
[12] |
RADISAVLJEVIC B, RADENOVIC A, BRIVIO J, et al. Single-Layer MoS2 transistors[J]. Nature Nanotechnology, 2011, 6(3): 147-150. |
[13] |
RADISAVLJEVIC B, KIS A. Mobility engineering and a metal-insulator transition in monolayer MoS2[J]. Nature Materials, 2013, 12(9): 815-820. |
[14] |
BAO W, CAI X, KIM D, et al. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects[J]. Applied Physics Letters, 2013, 102(4): 042104. |
[15] |
RADISAVLJEVIC B, WHITWICK M B, KIS A. Integrated circuits and logic operations based on single layer MoS2[J]. ACS Nano, 2011, 5(12): 9934-9938. |
[16] |
ZOU X, WANG J, CHIU C H, et al. Interface engineering for high-performance top-gated MoS2 field-effect transistors[J]. Advanced Materials, 2014, 26(36): 6255-6261. |
[17] |
CHENG R, JIANG S, CHEN Y, et al. Few-Layer molybdenum disulfide transistors and circuits for high-speed flexible electronics[J]. Nature Communications, 2014, 5(1): 1-9. |
[18] |
LEE J, WANG Z, HE K, et al. High frequency MoS2 nanomechanical resonators[J]. ACS Nano, 2013, 7(7): 6086-6091. |
[19] |
FRISENDA R, NAVARRO-MORATALLA E, GANT P, et al. Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials[J]. Chemical Society Reviews, 2018, 47(1): 53-68. |
[20] |
LIANG Y, ZHU J, XIAO F, et al. Two-Dimensional inverters based on MoS2-hBN-graphene heterostructures enabled by a layer-by-layer dry-transfer method[J]. IEEE Journal of the Electron Devices Society, 2021, 9: 1269-1274. |
[21] |
SCHRANGHAMER T F, SHARM M, SINGH R, et al. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications[J]. Chemical Society Reviews, 2021, 50(19): 11032-11054. |
[22] |
梁亚春, 焦陈寅, 肖飞, 等. 基于一种多功能系统的二维纳米器件高效制备[J]. 中国科学: 信息科学, 2022, 52(2): 348-357. |
LIANG Y C, JIAO C Y, XIAO F, et al. Fast prototyping of nanodevices based on two dimensional materials using a multifunctional fabrication system[J]. Scientia Sinica Informationis, 2022, 52(2): 348-357. |
[23] |
NI Z, WANG Y, YU T, et al. Raman spectroscopy and imaging of graphene[J]. Nano Research, 2008, 1(4): 273-291. |
[24] |
SOUIBGUI M, AJLANI H, CAVANNA A, et al. Raman study of annealed two-dimensional heterostructure of graphene on hexagonal boron nitride[J]. Superlattices and Microstructures, 2017, 112: 394-403. |
[25] |
DHAKAL K P, DUONG D L, LEE J, et al. Confocal absorption spectral imaging of MoS2: Optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2[J]. Nanoscale, 2014, 6(21): 13028-13035. |
[26] |
YANG R, WANG Z, FENG P X L. Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility[J]. Nanoscale, 2014, 6(21): 12383-12390. |
[27] |
YANG R, ZHENG X, WANG Z, et al. Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing[J]. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014, 32(6): 061203. |
[28] |
梁亚春, 朱健凯, 肖飞, 等. 二维纳米机电谐振器高效制备研究[J]. 电子科技大学学报, 2022, 51(3): 452-457. |
LIANG Y C, ZHU J K, XIAO F, et al. Fast prototyping of two-dimensional nanoelectromechanical resonators[J]. Journal of University of Electronic Science and Technology of China, 2022, 51(3): 452-457. |
[29] |
DAS S, CHEN H Y, PENUMATCHA A V, et al. High performance multilayer MoS2 transistors with scandium contacts[J]. Nano Letters, 2013, 13(1): 100-105. |