Wang Shouguo, Zhang Yimen, Zhang Yuming. Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 203-206.
Citation:
Wang Shouguo, Zhang Yimen, Zhang Yuming. Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 203-206.
Wang Shouguo, Zhang Yimen, Zhang Yuming. Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 203-206.
Citation:
Wang Shouguo, Zhang Yimen, Zhang Yuming. Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 203-206.
Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation
Doping by nitrogen ion-implantation is used to fabricate the Ohmic contacts of 4H-SiC. The implantation depth profile is simulated with the Monte Carlo simulator TRIM. Ni/Cr/Si-face 4H-SiC Ohmic contacts are measured by Transfer Length Method structures. The result for sheet resistance Rsh of the implanted layers is 30 kΩ/square. The specific contact resistances ρc of Ohmic contacts is 7.1×10-4 Ωcm2.
ISSN 
DownLoad: