Abstract: Conventional electronic devices are mainly composed of inorganic semiconductor materials such as silicon-based and rigid polymer insulating substrate materials, which are the basis of existing electronic technology. Although the traditional electronic technology has been developed, but due to the limitations of the material, resulting in the field of flexible electronics, its application still exists in a certain limit. Two-dimensional materials have high crystallinity, near-perfect lattice structure, atomic-level thickness and high mechanical tensile strength, and exhibit excellent charge-transfer properties, making them promising for applications in the field of flexible electronics. The paper takes advantage of the excellent mechanical properties of graphene, molybdenum disulfide and hexagonal boron nitride to prepare molybdenum disulfide-based field effect transistors by adopting mechanical exfoliation method and dry transfer. A self-built flexible test platform is used to test the flexible electrical performance of the device. The test results show that the designed two-dimensional heterojunction transistor has only a small change in electrical properties under static test conditions; however, under dynamic test conditions, due to the too small van der Waals force between layers, the sliding or displacement between layers makes the electrical properties of the device change significantly.